参数资料
型号: 25LC256T-E/MF
厂商: Microchip Technology
文件页数: 11/26页
文件大小: 0K
描述: IC EEPROM 256KBIT 10MHZ 8DFN
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
25AA256/25LC256
2.6
Write Status Register Instruction
See Figure 2-7 for the WRSR timing sequence.
( WRSR )
The Write Status Register instruction ( WRSR ) allows the
TABLE 2-3:
ARRAY PROTECTION
user to write to the nonvolatile bits in the STATUS
register as shown in Table 2-2. The user is able to
select one of four levels of protection for the array by
writing to the appropriate bits in the STATUS register.
The array is divided up into four segments. The user
has the ability to write-protect none, one, two, or all four
of the segments of the array. The partitioning is
controlled as shown in Table 2-3.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect (WP) pin and the Write-Protect Enable
BP1
0
0
1
1
BP0
0
1
0
1
Array Addresses
Write-Protected
none
upper 1/4
(6000h-7FFFh)
upper 1/2
(4000h-7FFFh)
all
(0000h-7FFFh)
(WPEN) bit in the STATUS register control the
programmable hardware write-protect feature. Hard-
ware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write-protected,
only writes to nonvolatile bits in the STATUS register
are disabled. See Table 2-1 for a matrix of functionality
on the WPEN bit.
FIGURE 2-7:
CS
WRITE STATUS REGISTER TIMING SEQUENCE ( WRSR )
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS Register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Impedance
SO
Note:
An internal write cycle (T WC ) is initiated on the rising edge of CS after a valid write STATUS register
sequence.
? 2007 Microchip Technology Inc.
DS21822F-page 11
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