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参数资料
| 型号： | 2B940AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 122K |
| 代理商： | 2B940AP |
1
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
s Features
q
High collector to emitter voltage VCEO
q
Large collector power dissipation PC
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–200
–150
–180
–6
–3
–2
30
2
150
–55 to +150
Unit
V
A
W
C
2SB940
2SB940A
2SB940
2SB940A
TC=25°C
Ta=25
°C
*h
FE1 Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE1
*
hFE2
VBE
VCE(sat)
fT
Conditions
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –50A, IE = 0
IC = –5mA, IB = 0
IE = –500A, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ
30
max
–50
240
–1
Unit
A
V
MHz
2SB940
2SB940A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
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