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参数资料
| 型号： | 2B940AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 122K |
| 代理商： | 2B940AP |
2
Power Transistors
2SB940, 2SB940A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–600
–500
–400
–300
–200
–100
T
C=25C
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
I
B=–4.5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0
–1.0
– 0.8
– 0.2
– 0.6
– 0.4
0
–2.0
–1.6
–1.2
– 0.8
– 0.4
T
C=100C
–25C
25C
V
CE=–10V
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
– 0.01
–3
–1
– 0.1
– 0.03
– 0.3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–10V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=0.5ms
5ms
1ms
I
CP
I
C
2SB940A
2SB940
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
103
102
(1)
(2)
(1) Without heat sink
(2) With a 100
× 100 × 2mm Al heat sink
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
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