参数资料
型号: 2MBI150NC-120
元件分类: IGBT 晶体管
英文描述: 150 A, 1200 V, N-CHANNEL IGBT
封装: M233, 7 PIN
文件页数: 3/4页
文件大小: 99K
代理商: 2MBI150NC-120
0,001
0,01
0,1
1
0,001
0,01
0,1
IGBT
Diode
Transient thermal resistance
Thermal
resistance
:
Rth(j-c)
[°C/W]
Pulse width : PW [sec]
0
500
1000
1500
2000
0
200
400
600
800
1000
800V
600V
Vcc=400V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25°C
Collector-Emitter
voltage
:
V
CE
[V]
Gate charge : Qg
[nC]
10
100
1000
tf
tr
toff
ton
Switching time vs. RG
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
Switching
time
:
ton,
tr,
toff,
tf
[nsec]
Gate resistance : RG [
]
0
1
2
3
4
5
0
100
200
300
Tj=125°C
25°C
Forward current vs. Forward voltage
V GE =OV
Forward
current
:
I
F
[A]
Forward voltage : VF [V]
0
100
200
300
10
100
Irr
25°C
trr
25°C
trr
125°C
Irr
125°C
Reverse recovery characteristics
trr, Irr vs. IF
Reverse
recovery
current
:
Irr
[A]
Reverse
recovery
time
:
trr
[nsec]
Forward current : IF [A]
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
1400
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -VGE <15V, Tj<125°C, RG >5.6
Collector
current
:
Ic
[A]
Collector-Emitter voltage : VCE [V]
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