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参数资料
| 型号： | 2MBI450U4J-120-50 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, MODULE-22 |
| 文件页数： | 4/15页 |
| 文件大小： | 639K |
| 代理商： | 2MBI450U4J-120-50 |
H04-004-03a
12
15
MS5F6858
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=450A, VGE=±15V, Tj=125oC
Tj <= 125oC
Tj=25oC
Vcc=600V, VGE=±15V, RG=1.1Ω
+VGE=15V, -VGE <= 15V, RG >= 1.1Ω,
Stray inductance <= 100nH
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=450A, VGE=±15V,
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=25oC
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=125oC
10
100
1000
10000
0
200
400
600
800
Collector current : Ic [ A ]
ton
tr
toff
tf
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
10
100
1000
10000
0
200
400
600
800
Collector current : Ic [ A ]
tf
tr
toff
ton
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
10
100
1000
10000
0.1
1.0
10.0
100.0
Gate resistance : RG [ Ω ]
toff
ton
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
tr
tf
0
20
40
60
80
100
0
150
300
450
600
750
900
Collector current : Ic [ A ]
Eoff(125oC)
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Eon(125oC)
Eoff(25oC)
Eon(25oC)
Err(125oC)
Err(25oC)
0
20
40
60
80
100
0.1
1.0
10.0
100.0
Gate resistance : RG [ Ω ]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Eon
Eoff
Err
0
150
300
450
600
750
900
1050
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2MBI450U4N-120-50 | 制造商:Fuji Electric 功能描述:IGBT 2 PACK MOD 1200V 450A M254 |
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