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参数资料
| 型号： | 2N1039 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, PNP, Ge, POWER TRANSISTOR |
| 封装： | CAN PACKAGE |
| 文件页数： | 1/1页 |
| 文件大小： | 240K |
| 代理商： | 2N1039 |
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2N1039 Information
Category Transistors
2N1039 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 3.0
Absolute Max. Power Diss. (W) : 20
Maxim um Operating Tem p (шC) : 100#
I(CBO) Max. (A) : 125u
@V(CBO) (V) (Test Condition) : 30
V(CE)sat Max. (V) : .25
@I(C) (A) (Test Condition) : 1.0
@I(B) (A) (Test Condition) : 100m
h(FE) Min. Current gain. : 33
h(FE) Max. Current gain. : 200
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : .50
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(r) Max. (s) Rise tim e :
t(f) Max. (s) Fall tim e. :
Package Style : Can
Mounting Style : T
Description :
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