- 您现在的位置：买卖IC网 > PDF目录30408 > 2N2222AU-# (MICROSEMI CORP-LAWRENCE) 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N2222AU-# |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | DIE PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 48K |
| 代理商： | 2N2222AU-# |
2
Electrical Characteristics @ Tj = 25
°C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Breakdown Voltage, Collector to Base
Bias Cond. D, IC=10uAdc
75
Vdc
V(BR)EBO
Breakdown Voltage, Emitter to Base
Bias Cond. D, IE=10uAdc
6
Vdc
V(BR)CEO
Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC= 10mAdc, pulsed
50
Vdc
ICES
Collector to Emitter Cutoff Current
Bias Cond. D, VCE=50Vdc
50 nAdc
ICBO1
Collector to Base Cutoff Current
Bias Cond. D, VCB=60Vdc
10 nAdc
IEBO
Emitter to Base Cutoff Current
Bias Cond. D, VEB= 4Vdc
10 nAdc
ON CHARACTERISTICS
hFE1
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
50
hFE2
Forward-Current Transfer Ratio
VCE=10Vdc, IC=1.0mAdc
75
325
hFE3
Forward-Current Transfer Ratio
VCE=10Vdc, IC=10mAdc
100
hFE4
Forward-Current Transfer Ratio
VCE=10Vdc, IC=150mAdc, pulsed
100
300
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=500mAdc, pulsed
30
VCE(sat)1
Collector to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.3 Vdc
VCE(sat)2
Collector to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
1 Vdc
VBE(sat)1
Base to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.6
1.2 Vdc
VBE(sat)2
Base to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
2 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
50
/hfe/
Magnitude of Short Circuit Forward
VCE= 20Vdc,IC =50mAdc, f=100MHz
2.5
Current Transfer Ratio
Cobo
Output Capacitance
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
8 pF
Cibo
Input Capacitance
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
25 pF
SWITCHING CHARACTERISTICS
ton
Saturated Turn-on Time
As defined in 19500/255 Figure 8
45 nS
toff
Saturated Turn-off Time
As defined in 19500/255 Figure 9
300 nS
相关PDF资料 |
PDF描述 |
|---|---|
| 2N2222AVC-# | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N2222AD-# | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N2222ADS-# | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N2222AUS-# | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N2222ACSM-RHG4 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2222AU-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222AUA | 功能描述:两极晶体管 - BJT NPN G.P. Transistor 4 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2222AUAJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 4-Pin UA |
| 2N2222AUATX | 制造商:TT Electronics / OPTEK Technology 功能描述:4 PIN, SMT NPN GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:4 Pin, SMT NPN general purpose transistor |
| 2N2222AUATXV | 制造商:TT Electronics / OPTEK Technology 功能描述:4 PIN, SMT NPN GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:4 Pin, SMT NPN general purpose transistor |
发布紧急采购，3分钟左右您将得到回复。