参数资料
型号: 2N2324AS
厂商: MICROSEMI CORP-LAWRENCE
元件分类: Silicon Controlled Rectifier
英文描述: 0.3454 A, 100 V, SCR, TO-5
封装: TO-5, 3 PIN
文件页数: 1/2页
文件大小: 57K
代理商: 2N2324AS
TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices
Qualified
Level
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N2323,S/
2N2323A,S
2N2324,S/
2N2324A,S
2N2326,S/
2N2326A,S
2N2328,S/
2N2328A,S
2N2329,S Unit
Reverse Voltage
VRM
50
100
200
300
400
Vdc
Working Peak Reverse Voltage VRM
75
150
300
400
500
Vpk
Forward Blocking Voltage
VFBXM
50
(3/4)
100
(3/4)
200
(3/4)
300
(3/4)
400
(3)
Vpk
Average Forward Current
(1)
IO
0.22
Adc
Forward Current Surge Peak
(2)
IFSM
15
Adc
Cathode-Gate Current
VKGM
6
Vpk
Operating Temperature
Top
-65 to +125
0C
Storage Junction Temp
Tstg
-65 to +150
0C
1)
This average forward current is for an ambient temperature of 80
0C and 180 electrical degrees of
conduction.
2)
Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5
s after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3)
Gate connected to cathode through 1,000 ohm resistor.
4)
Gate connected to cathode through 2,000 ohm resistor.
TO-5
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 k
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
VR = 50 Vdc
2N2323, S, A, AS
VR = 100 Vdc
2N2324, S, A, AS
VR = 200 Vdc
2N2326, S, A, AS
VR = 300 Vdc
2N2328, S, A, AS
VR = 400 Vdc
2N2329, S,
IRBX1
10
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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