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参数资料
| 型号： | 2N2919L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 2/2页 |
| 文件大小： | 27K |
| 代理商： | 2N2919L |
6 Lake Street, Lawrence, MA 01841
03/98 REV: D
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 2 of 2
2N2919, L, 2N2920, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 Adc, VCE = 5.0Vdc
2N2929, 2N2919L
2N2920, 2N2920L
IC = 100 Adc, VCE = 5.0 Vdc
2N2929, 2N2919L
2N2920, 2N2920L
IC = 1.0 mAdc, VCE = 5.0 Vdc
2N2929, 2N2919L
2N2920, 2N2920L
hFE
60
175
100
235
150
300
240
600
325
800
600
1000
Collector-Emitter Saturation Voltage
IC = 1.0 mAdc, IB = 100 Adc
VCE(sat)
0.3
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 mAdc, IB = 100 Adc
VBE(sat)
0.5
1.0
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 20 MHz
h
fe
3.0
20
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
5.0
pF
(3)Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2919U | 制造商:Microsemi Corporation 功能描述:NPN DUAL TRANSISTORS U LAW - Bulk |
| 2N292 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:alloy-junction germanium transistors |
| 2N2920 | 功能描述:两极晶体管 - BJT NPN Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2920_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N2920A | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTORNPNNPN60V0.05ATO78 制造商:SOLID STATE 功能描述:TRANSISTOR,NPNNPN,60V,0.05A,TO78 制造商:Solid State Devices Inc (SSDI) 功能描述:BIPOLAR TRANSISTOR, DUAL NPN, 60V, TO-71; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:1.5W; DC Collector Current:30mA; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:7 |
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