参数资料
型号: 2N3053A
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 700 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封装: HERMETIC SEALED, METAL, TO-39, 3 PIN
文件页数: 1/1页
文件大小: 11K
代理商: 2N3053A
2N3053A
Bipolar NPN Device.
V
CEO =
40V
I
C = 0.7A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
40
V
I
C(CONT)
0.7
A
h
FE
@ 10/0.15 (V
CE / IC)
50
120
-
f
t
100M
Hz
P
D
0.8
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相关PDF资料
PDF描述
2N3055S 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3055 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3107G4 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3107 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3108 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
相关代理商/技术参数
参数描述
2N3053L 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN
2N3053SMD 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3053SMD05 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3054 功能描述:两极晶体管 - BJT NPN Silicon Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N3054 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR