参数资料
型号: 2N3391A
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-98
封装: TO-98, 3 PIN
文件页数: 1/1页
文件大小: 237K
代理商: 2N3391A
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2N3391A Information
Category Transistors
2N3391A Specifications
Military/High-Rel : N
V(BR)CEO (V) : 25
V(BR)CBO (V) : 25
I(C) Max. (A) : 100m
Absolute Max. Power Diss. (W) : 200m
Maxim um Operating Tem p (шC) : 125ю
I(CBO) Max. (A) : 100n
@V(CBO) (V) (Test Condition) : 18
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 250
h(FE) Max. Current gain. : 500
@I(C) (A) (Test Condition) : 2.0m
@V(CE) (V) (Test Condition) : 4.5
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 10p
@V(CB) (V) (Test Condition) : 10
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-98
Mounting Style : T
Description :
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2N3391 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-98
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2N3391NSC8834 制造商:Motorola 功能描述:2N3391
2N3392 功能描述:两极晶体管 - BJT NPN 25V 500mA BULK HFE/300 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2