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参数资料
| 型号： | 2N3416D75Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 5/7页 |
| 文件大小： | 304K |
| 代理商： | 2N3416D75Z |
ITEM DESCRIPTION
Base of Package to Lead Bend
Component Height
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0.098 (max)
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Note : All dimensions are in inches.
ITEM DESCRIPTION
SYSMBOL
MINIMUM
MAXIMUM
Reel Diameter
D1
13.975
14.025
Arbor Hole Diameter (Standard)
D2
1.160
1.200
(Small Hole)
D2
0.650
0.700
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Depth
W1
0.370
0.570
Flange to Flange Inner Width
W2
1.630
1.690
Hub to Hub Center Width
W3
2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P
Pd
b
d
L1
L
S
WO
W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User Direction of Feed
SENSI TIVE DEVICES
ELECT ROSTATIC
D1
D3
Customized Label
W2
W1
W3
F63TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3417 | 功能描述:两极晶体管 - BJT NPN 50V 500mA BULK HFE/540 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3417 APM | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:500mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 3mA，50mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 2mA，4.5V 功率 - 最大值:1.5W 频率 - 跃迁:- 工作温度:-65°C ~ 150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 标准主体（!--TO-226AA） 供应商器件封装:TO-92 标准包装:2,000 |
| 2N3417"D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:RF TRANSISTOR NPN 50V TO-92 |
| 2N3417 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| 2N3417/D89Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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