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参数资料
| 型号： | 2N3421 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | 2N3421 |
6 Lake Street, Lawrence, MA 01841
03/98 REV: A
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N3418, S
2N3420, S
2N3419, S
2N3421, S
Unit
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
85
125
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
Collector Current
tP ≤ 1.0 ms, duty cycle ≤ 50%
IC
3.0
5.0
Adc
Total Power Dissipation @ TA = 25
0C(1)
@ TC =
100
0C(2)
PT
1.0
15
W
W/
0C
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
1) Derate linearly 5.72 mW/
0C for TA > 250C
2) Derate linearly 150 mW/
0C for TC > 1000C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 50 mAdc, IB = 0
2N3418, S, 2N3420, S
2N3419, S 2N3421, S
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VBE = -0.5 Vdc, VCE = 80 Vdc
2N3418, S, 2N3420, S
VBE = -0.5 Vdc, VCE = 120 Vdc
2N3419, S 2N3421, S
ICEX
0.3
Adc
Collector-Emitter Cutoff Current
VCE = 45 Vdc, IB = 0
2N3418, S, 2N3420, S
VCE = 60 Vdc, IB = 0
2N3419, S 2N3421, S
ICEO
5.0
Adc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc, IC = 0
VEB = 8.0 Vdc, IC = 0
IEBO
0.5
10
Adc
TECHNICAL DATA
2N3418, 2N3419,
2N3420, 2N3421
TO- 5
2N3418S, 2N3419S,
2N3420S, 2N3421S
TO-39 (TO205-AD)
2N3418, S, JAN, TX, TXV
2N3419, S, JAN, TX, TXV
2N3420, S, JAN, TX, TXV
2N3421, S, JAN, TX, TXV
Processed per MIL-PRF-19500/393
NPN SILICON MEDIUM-POWER TRANSISTOR
MIL-PRF
QPL
DEVICES
相关PDF资料 |
PDF描述 |
|---|---|
| 2N341 | 85 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-11 |
| 2N340 | 85 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-11 |
| 2N3420ALE1 | 5000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AA |
| 2N3420SMD | 4000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2N3420SMDR4 | 4000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3421A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39 |
| 2N3421ASMD | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3421ASMD05 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2N3421JAN | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3421JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 3A 3-Pin TO-5 |
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