参数资料
型号: 2N3439UA
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: UA, 3 PIN
文件页数: 2/2页
文件大小: 101K
代理商: 2N3439UA
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
T4-LDS-0134 Rev. 1 (091510)
Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 20mAdc, VCE = 10Vdc
IC = 2.0mAdc, VCE = 10Vdc
IC = 0.2mAdc, VCE = 10Vdc
hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VCE(sat)
0.5
Vdc
Base-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VBE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz
|hfe|
3.0
15
Forward Current Transfer Ratio
IC = 5.0mAdc, VCE = 10V, f = 1.0kHz
hfe
25
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
10
pF
Input Capacitance
VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
75
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc
ton
1.0
s
Turn-Off Time
VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc
toff
10
s
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 5.0Vdc, IC = 1.0Adc
Both Types
Test 2
VCE = 350Vdc, IC = 14mAdc
2N3439
Test 3
VCE = 250Vdc, IC = 20mAdc
2N3440
(3) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2.0%
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