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参数资料
| 型号： | 2N3440.MODG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 52K |
| 代理商： | 2N3440.MODG4 |
2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3066
Issue: 1
7V
1A
0.5A
5W
1W
–65 to 200°C
200°C
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited as
drivers in high-voltage low current inverters,
switching and series regulators.
VCBO
Collector – Base Voltage (IE = 0)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC
Collector Current
IB
Base Current
Ptot
Total Power Dissipation at Tcase ≤ 25°C
Tamb ≤ 50°C
Tstg
Storage Temperature
Tj
Junction Temperature
450V
350V
300V
250V
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS(T
case = 25°C unless otherwise stated)
2N3439
2N3440
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
TO39 PACKAGE (TO-205AD)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3439G4 | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440G4 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440SE4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3440S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3442 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
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