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参数资料
| 型号： | 2N3440.MODG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 52K |
| 代理商： | 2N3440.MODG4 |
2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3066
Issue: 1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 50mA
2N3439
IC = 50mA
2N3440
VCE = 300V
2N3439
VCE = 200V
2N3440
VCE = 450V
2N3439
VCE = 300V
2N3440
VCB = 350V
2N3439
VCB = 250V
2N3440
VEB = 6V
IC = 50mA
IB = 4mA
IC = 50mA
IB = 4mA
IC = 20mA
VCE = 10V
IC = 2mA
VCE = 10V
VCEO(sus)* Collector – Emitter Sustaining Voltage
(IB = 0)
ICEO
Collector Cut-off Current
(IB = 0)
ICEX
Collector Cut-off Current
(VBE = -1.5V)
ICBO
Collector – Base Cut-off Current
(IE = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
fT
Transition Frequency
Cob
Output Capacitance
hfe
Small Signal Current Gain
IC = 10mA
VCE = 10V
f = 5MHz
VCB = 10V
f = 1MHz
IC = 5mA
VCE = 10V
f = 1kHz
15
10
25
MHz
pF
—
* Pulse test tp = 300s , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
350
250
20
50
500
20
0.5
1.3
40
160
30
V
A
V
—
2N3439 only
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to Ambient
175
°C/W
RθJC
Thermal Resistance Junction to Case
35
°C/W
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| 2N3439G4 | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
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| 2N3440SE4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3440S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3442 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
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