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参数资料
| 型号： | 2N3440L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 32K |
| 代理商： | 2N3440L |
6 Lake Street, Lawrence, MA 01841
03/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N3439
2N3440
Units
Collector-Emitter Voltage
VCEO
350
250
Vdc
Collector-Base Voltage
VCBO
450
300
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation @TA = 25
0C(1)
@TC = 25
0C(2)
PT
0.8
5.0
W
W/
0C
Operating & Storage Junction
Temperature Range
TJ, Tstg
-55 to +200
0C
1)
Derate linearly 4.57 mW/
0C for TA > +250C
2)
Derate linearly 28.5 mW/
0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
2N3439
2N3440
V(BR)CEO
350
250
Vdc
Collector-Emitter Cutoff Current
VCE = 300 Vdc
2N3439
VCE = 200 Vdc
2N3440
ICEO
2.0
Adc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
10
Adc
TECHNICAL DATA
2N3439 JTX, JTXV
2N3439L JTX, JTXV
2N3440 JTX, JTXV
2N3440L JTX, JTXV
Processed per MIL-PRF-19500/368
NPN SILICON LOW-POWER TRANSISTOR
2N3439L, 2N3440L,
TO- 5
2N3439, 2N3440,
TO-39 (TO205-AD)
MIL-PRF
QPL
DEVICES
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3439 | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3441 | 3 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3444 | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3444 | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3440MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| 2N3440S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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