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参数资料
| 型号： | 2N3440L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 32K |
| 代理商： | 2N3440L |
6 Lake Street, Lawrence, MA 01841
03/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
2N3439, L, 2N3440, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc
2N3439
VCE = 300 Vdc, VBE = -1.5 Vdc
2N3440
ICEX
5.0
Adc
Collector-Base Cutoff Current
VCB = 360 Vdc
2N3439
VCB = 250 Vdc
2N3440
VCB = 450 Vdc
2N3439
VCB = 300 Vdc
2N3440
ICBO
2.0
5.0
Adc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc
IC = 2.0 mAdc, VCE = 10 Vdc
IC = 0.2 mAdc, VCE = 10 Vdc
hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
VCE(sat)
0.5
Vdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
VBE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
hfe
25
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
10
pF
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
75
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 Vdc; IC = 20 mAdc, IB1= 2.0 mAdc
ton
1.0
s
Turn-Off Time
VCC = 200 Vdc; IC = 20 mAdc, IB1 = -IB2 = 2.0 mAdc
toff
10
s
SAFE OPERATING AREA
DC Tests
TC = 25
0C, 1 cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 1.0 Adc
Both Types
Test 2
VCE = 350 Vdc, IC = 14 mAdc
2N3439
Test 3
VCE = 250 Vdc, IC = 20 mAdc
2N3440
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3440MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-39 |
| 2N3440S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-39 |
| 2N3440UA | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| 2N3441 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 3A 3PIN TO-66 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:BJT, NPN, 140V, 3A, TO-66; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:100; Operating Temperature Min:-65C; Operating Temperature Max:200C;RoHS Compliant: Yes |
| 2N3442 | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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