参数资料
型号: 2N3467L
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
文件页数: 1/2页
文件大小: 55K
代理商: 2N3467L
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348
Devices
Qualified Level
2N3467
2N3467L
2N3468
2N3468L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3467
2N3467L
2N3468
2N3468L
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
Collector-Base Voltage
VCBO
40
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
1.0
5.0
W
Operating & Storage Junction Temperature Range
Top, Tstg
-55 to +175
0C
1) Derate linearly 5.71 mW/
0C for TA > +250C
2) Derate linearly 28.6 mW/
0C for TC > +250C
TO-39* (TO-205AD)
2N3467, 2N3468
TO-5*
2N3467L, 2N3468L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3467, L
2N3468, L
V(BR)CBO
40
50
Vdc
Emitter-Base Breakdown Current
IE = 10 Adc
V(BR)EBO
5.0
Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3467, L
2N3468, L
V(BR)CEO
40
50
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
ICBO
100
ηAdc
Collector-Emitter Cutoff Current
VEB = 3.0 Vdc, VCE = 30
ICEX
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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PDF描述
2N3467 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
2N3468L 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3468 1000 mA, 5 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
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2N3468 功能描述:两极晶体管 - BJT PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N3468A 制造商: 功能描述:
2N3468L 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 50V 1A 3PIN TO-5 - Bulk
2N3469 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 25V 5A 3PIN TO-5 - Bulk
2N3470 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-5/16