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参数资料
| 型号： | 2N3506 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 90K |
| 代理商： | 2N3506 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
T4-LDS-0016 Rev. 1 (072040)
Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 3.0Adc, VCE = 5Vdc
2N3506
2N3507
hFE
25
20
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
2N3506
2N3507
hFE
25
17
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 2Vdc
2N3506A
2N3507A
hFE
25
17
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
VCE(sat)
0.5
Vdc
Collector-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
VCE(sat)
1.0
Vdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
VCE(sat)
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
VBE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
VBE(sat)
0.8
1.3
Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
VBE(sat)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 20MHz
|hfe|
3.0
15
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
40
pF
Input Capacitance
VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
300
pF
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5Adc, IB1 = 150mAdc
td
15
ns
Rinse Time
IC = 1.5Adc, IB1 = 150mAdc
tr
30
ns
Storage Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
ts
55
ns
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
tf
35
ns
(3) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.
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PDF描述 |
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| 2N3507AJ | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3507AJX | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3507 | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3507 | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3507 | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3506_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3506A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3A 3PIN TO-39 - Bulk |
| 2N3506AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3A 3PIN TO-5 - Bulk |
| 2N3506JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 40V 3A 3-Pin TO-39 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 40V 3A 3-Pin TO-5 |
| 2N3506L | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Chip Type 2C3506 Geometry 1506 Polarity NPN |
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