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| 型号： | 2N3634.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 108K |
| 代理商： | 2N3634.MOD |
SILICON PNP TRANSISTOR
2N3634
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7744
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-140
V
VBE = -5.0V
IC = 0
-10
A
IEBO
Emitter Cut-Off Current
VBE = -3.0V
IC = 0
-50
VCB = -100V
IE = 0
-100
nA
TA = 150°C
-10
ICBO
Collector Cut-Off Current
VCB = -140V
IE = 0
-10
ICEO
Collector-Emitter
Cut-off Current
VCE = -100V
-10
A
IC = -0.10mA
VCE = -10V
25
IC = -1.0mA
VCE = -10V
45
IC = -10mA
VCE = -10V
50
IC = -50mA
VCE = -10V
50
160
TA = -55°C
25
hFE
(1)
DC Current Gain
IC = -150mA
VCE = -10V
30
IC = -10mA
IB = -1.0mA
-0.3
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.6
IC = -10mA
IB = -1.0mA
-0.8
VBE(sat)
(1)
Base-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.65
-0.9
V
DYNAMIC CHARACTERISTICS
IC = -30mA
VCE = -30V
fT
Transition Frequency
f = 100MHz
150
MHz
IC = -10mA
VCE = -10V
hfe
Small-Signal Current Gain
f = 1.0KHz
40
160
VCB = -20V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
10
pF
VEB = -1.0V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
75
pF
ton
Turn-On Time
VCC = -100V
VBE = 4.0V
400
toff
Turn-Off Time
IC = -50mA
IB1 = -IB2 = -5mA
600
ns
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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相关代理商/技术参数 |
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| 2N3634UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N3635 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3635JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3635JV | 制造商:Motorola 功能描述:2N3635 MOT'88 N10D9H |
| 2N3635L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
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