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参数资料
| 型号： | 2N3634 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Small Signal |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 32K |
| 代理商： | 2N3634 |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
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ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
S2N3634, L, S2N3636, L
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
S2N3635, L, S2N3637, L
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
hFE
25
45
50
30
55
90
100
60
150
300
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.3
0.6
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
VBE(sat)
0.65
0.8
0.9
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
h
fe
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
hfe
40
80
160
320
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
S2N3634, L, S2N3636, L
S2N3635, L, S2N3637, L
hje
100
200
600
1200
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
hoe
200
s
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
10
pF
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
75
pF
Noise Figure
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
5.0
3.0
dB
SAFE OPERATING AREA
DC Tests
TC = 25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc
S2N3634, L, S2N3635, L
VCE = 130 Vdc, IC = 20 mAdc
S2N3636, L, S2N3637, L
Test 2
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3634_1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N3634_2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP SILICON SWITCHING TRANSISTOR |
| 2N3634CSM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP |
| 2N3634J | 制造商:MINNESOTA MINING AND MFG 功能描述: |
| 2N3634JANTX | 制造商:Microsemi Corporation 功能描述: |
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