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参数资料
| 型号： | 2N3634CSM-QR-BG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, LCC-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 15K |
| 代理商： | 2N3634CSM-QR-BG4 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 2/00
2N3634CSM
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
FEATURES
High Voltage Switching
Low Power Amplifier Applications
Hermetic Ceramic Surface Mount
Package
APPLICATIONS:
CECC Screening Options
Space Quality Levels Options.
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emmiter – Base Voltage
IC
Collector Current
PD
Total Device Dissipation @ TA = 25°C
TJ , TSTG
Operating and Storage Junction Temperature Range
140V
5V
1A
500mW
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54
±
0.
13
(0
.10
±
0.
005)
0.
76
±
0.
1
5
(0
.03
±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
A =
3
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相关代理商/技术参数 |
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|---|---|
| 2N3634J | 制造商:MINNESOTA MINING AND MFG 功能描述: |
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| 2N3635 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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