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| 型号： | 2N3634UB |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC PACKAGE-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 169K |
| 代理商： | 2N3634UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452)
Page 4 of 5
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4.
TL measured from maximum HD.
5.
CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6.
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by gauge and gauging procedure.
7.
LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8.
r (radius) applies to both inside corners of tab.
9.
For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10.
For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum (TO-5).
11.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1: Physical dimensions (TO-5 and TO-39)
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TYP
5.08 TYP
7
LD
.016
.021
0.41
0.53
6
LL
See notes 7, 9, and 10
LU
.016
.019
0.41
0.48
7
L1
050
1.27
7
L2
.250
6.35
7
P
.100
2.54
5
Q
.050
1.27
r
.010
0.254
8
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
α
45° TP
6
Term 1
Emitter
Term 2
Base
Term 3
Collector
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| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3635 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3635JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3635JV | 制造商:Motorola 功能描述:2N3635 MOT'88 N10D9H |
| 2N3635L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3635LJTXV | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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