参数资料
型号: 2N3773
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
封装: ROHS COMPLIANT, METAL PACKAGE-2
文件页数: 3/7页
文件大小: 83K
代理商: 2N3773
2N3773
3/7
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE = -1.5 V)
VCE = 140 V
TC = 150 °C
2
10
mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 120 V
10
mA
ICBO
Collector cut-off current
(IE = 0)
VCB = 140 V
2mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 7 V
5mA
VCEO(sus)
(1)
Collector-emitter
sustaining voltage
(IB = 0)
IC = 0.2 A
140
V
VCEV(sus)
(1)
Collector-emitter
sustaining voltage
(VBE = -1.5 V)
IC = 0.1 A
160
V
VCER(sus)
(1)
Collector-emitter
sustaining voltage
(RBE = 100 Ω)
IC = 0.2 A
150
V
VCE(sat)
(1)
1.
Pulsed: Pulse duration = 300 s, duty cycle
≤ 2 %
Collector-emitter
saturation voltage
IC = 8 A
IB = 0.8 A
IC = 16 A
IB = 3.2 A
1.4
4
V
VBE
(1)
Base-emitter voltage
IC = 8 A
VCE = 4 V
2.2
V
hFE
(1)
DC current gain
IC = 8 A
VCE = 4 V
IC = 16 A
VCE = 4 V
15
5
60
Is/b
Second Breakdown
Collector Current
VCE = 30 V
t = 1 s (non repetitive)
5A
相关PDF资料
PDF描述
2N3773 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3791 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
2N3789 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-3
2N3798 50 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N3798 50 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
相关代理商/技术参数
参数描述
2N3773 LEADFREE 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N3773 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3
2N3773/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Silicon Power Transistor
2N3773_04 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Transistors
2N3773_08 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power NPN transistor