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参数资料
| 型号： | 2N3866UB |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, CERSOT-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 233K |
| 代理商： | 2N3866UB |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3866UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3866UBJ)
JANTX level (2N3866UBJX)
JANTXV level (2N3866UBJV)
JANS level (2N3866UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose high frequency
VHF-UHF amplifier transistor
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1008
Reference document:
MIL-PRF-19500/398
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
30
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
3.5
Volts
Collector Current, Continuous
IC
400
mA
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
0.5
2.86
W
mW/
°C
Thermal Resistance
RθJA
325
°C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
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