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参数资料
| 型号： | 2N3906DCSM |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 封装： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件页数： | 1/1页 |
| 文件大小： | 10K |
| 代理商： | 2N3906DCSM |
2N3906DCSM
Dual Bipolar PNP Devices.
V
CEO =
40V
I
C = 0.2A
All Semelab hermetically sealed products can
be processed in accordance with the
requirements of BS, CECC and JAN, JANTX,
JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
40
V
I
C(CONT)
0.2
A
h
FE
@ 10/1m (V
CE / IC)
100
-
f
t
250M
Hz
P
D
0.31
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Dual Bipolar PNP Devices in a
hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
6
3
4
5
2.54
±
0.13
(0.10
±
0.005)
0.64
±
0.06
(0.025
±
0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32
±
0.13
(0.170
±
0.005)
LCC2 (MO-041BB)
Pinouts
Pin 1 – Collector 1
Pin 4 – Collector 2
Pin 2 – Base 1
Pin 5 – Emitter 2
Pin 3 – Base 2
Pin 6 – Emitter 1
相关PDF资料 |
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| 2N3906S | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| 2N3906TPE2 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3906E | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| 2N3906G | 功能描述:两极晶体管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3906-G | 功能描述:二极管 - 通用，功率，开关 -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 2N3906G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N3906GE8487 | 制造商:GE 功能描述:2N3906 |
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