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参数资料
| 型号： | 2N3960UB |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, CERSOT-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 233K |
| 代理商： | 2N3960UB |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3960UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3960UBJ)
JANTX level (2N3960UBJX)
JANTXV level (2N3960UBJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power switching transistor
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0003
Reference document:
MIL-PRF-19500/399
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
12
Volts
Collector-Base Voltage
VCBO
20
Volts
Emitter-Base Voltage
VEBO
4.5
Volts
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
400
2.3
mW
mW/
°C
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3960UB_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3961 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1A I(C) | TO-102 |
| 2N3962 | 功能描述:两极晶体管 - BJT PNP Low Lvl SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3962CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3963 | 功能描述:两极晶体管 - BJT SMALL SIGNAL TRANS PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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