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参数资料
| 型号： | 2N3961 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-102 |
| 封装： | TO-102, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N3961 |
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2N3961 Availability
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2N3961 Information
Category Transistors
Type Bipolar NPN
2N3961 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 40
V(BR)CBO (V) : 65
I(C) Max. (A) : 1.0
Absolute Max. Power Diss. (W) : 10
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 1.0m
@V(CBO) (V) (Test Condition) :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 350M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
Power Gain Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Noise Figure Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Sem iconductor Material :
Package Style : TO-102
Mounting Style : T
Description :
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AMS is a leading m anufacturer of com m ercial electronic com ponents, specializing in parts discontinued by leading m anufacturers. Not only can
we create and test custom transistors and diodes for your special applications, but with our outstanding network of industry partners, we can
supply virtually any existing discrete com ponent, integrated circuit, or other hard-to-find electronic part for all your needs - big or sm all.
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相关PDF资料 |
PDF描述 |
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| 2N3962CSMG4 | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3962G4 | 200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
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| 2N3963 | 200 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3962 | 功能描述:两极晶体管 - BJT PNP Low Lvl SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3962CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3963 | 功能描述:两极晶体管 - BJT SMALL SIGNAL TRANS PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3963CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N3964 | 功能描述:两极晶体管 - BJT PNP Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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