参数资料
型号: 2N3997JX
厂商: SEMICOA CORP
元件分类: 功率晶体管
英文描述: 5 A, 80 V, NPN, Si, POWER TRANSISTOR
封装: HERMETIC SEALED, METAL CAN-3
文件页数: 1/2页
文件大小: 378K
代理商: 2N3997JX
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3997
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3997J)
JANTX level (2N3997JX)
JANTXV level (2N3997JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
High-speed power switching
Power transistor
NPN silicon transistor
Features
Hermetically sealed TO-x metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/374
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
80
Volts
Collector-Base Voltage
VCBO
100
Volts
Emitter-Base Voltage
VEBO
8
Volts
Collector Current, Continuous
IC
5
A
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
2
11.4
W
mW/
°C
Power Dissipation, TC = 25°C
Derate linearly above 25
°C
PT
30
300
W
mW/
°C
Thermal Resistance
RθJC
3.33
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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