- 您现在的位置：买卖IC网 > PDF目录49843 > 2N4033UA (MICROSEMI CORP-LAWRENCE) 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N4033UA |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC PACKAGE-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 284K |
| 代理商： | 2N4033UA |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0157 Rev. 2 (101305)
Page 4 of 6
NOTES:
1
Dimension are in inches.
2
Millimeters equivalents are given for general information only.
3
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4
Dimension TL measured from maximum HD.
5
Body contour optional within zone defined by HD, CD, and Q.
6
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods.
7
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8
All three leads.
9
The collector shall be internally connected to the case.
10 Dimension r (radius) applies to both inside corners of tab.
11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12 For “L” suffix devices, dimension LL is 1.50 (38.10mm) minimum, 1.75 (44.45mm) maximum.
FIGURE 2. Physical dimensions for 2N4033 (TO-39).
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70 19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
Q
.050
1.27
5
TL
.029
.045
0.74
1.14
3, 4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
P
.100
2.54
α
45° TP
6
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4033UB | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N4029 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N4029 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N4033 | Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N4033 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4033UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:SMALL SIGNAL TRANSISTOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N4033UBJANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 1A 3-Pin CSOT-23 |
| 2N4034 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI PNP LO-PWR BJT |
| 2N4035 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N4036 | 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。