参数资料
型号: 2N4033UA
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: CERAMIC PACKAGE-3
文件页数: 6/6页
文件大小: 284K
代理商: 2N4033UA
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0157 Rev. 2 (101305)
Page 6 of 6
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 Hatched areas on package denote metalized areas.
4 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5 In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
FIGURE 4. Physical dimensions, surface mount (UB version).
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
BL
.115
.128
2.92
3.25
BW
.085
.108
2.16
2.74
CL
.128
3.25
CW
.108
2.74
LL1
.022
.038
0.56
0.96
LL2
.017
.035
0.43
0.89
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
LS1
.036
.040
0.91
1.02
LS2
.071
.079
1.81
2.01
LW
.016
.024
0.41
0.61
r
.008
.203
r1
.012
.305
r2
.022
.559
相关PDF资料
PDF描述
2N4033UB 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N4029 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N4029 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N4033 Si, SMALL SIGNAL TRANSISTOR, TO-39
2N4033 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
相关代理商/技术参数
参数描述
2N4033UB 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:SMALL SIGNAL TRANSISTOR - Gel-pak, waffle pack, wafer, diced wafer on film
2N4033UBJANTXV 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 1A 3-Pin CSOT-23
2N4034 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI PNP LO-PWR BJT
2N4035 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N4036 功能描述:两极晶体管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2