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参数资料
| 型号： | 2N4119 |
| 厂商： | MICROSS COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 封装： | TO-72, 4 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 778K |
| 代理商： | 2N4119 |
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4119
LOW POWER
IDSS<90 A
MINIMUM CIRCUIT LOADING
IGSS<10 pA
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
65°C to +175°C
Operating Junction Temperature
55°C to +150°C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
MAXIMUM CURRENT
Gate Current (Note 1)
50mA
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source (Note 2)
40V
2N4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
40
V
IG = 1A, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
2
6
V
VDS = 10V, ID = 1nA
IDSS
Gate to Source Saturation Current
0.20
0.60
mA
VDS = 10V, VGS = 0V
10
VGS = 20V, VDS = 0V
IGSS
Gate Leakage Current
25
pA
VGS = 20V, VDS = 0V, 150°C
gfs
Forward Transconductance(Note 3)
100
330
gos
Output Conductance
10
mho
VDS = 10V, VGS = 0V, f = 1kHz
Ciss
Input Capacitance
3
Crss
Reverse Transfer Capacitance
1.5
pF
VDS = 10V, VGS = 0V, f = 1MHz
NOTES
1 . Absolute maximum ratings are limiting values above which 2N4119 serviceability may be impaired.
2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged
3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)
The 2N4119 is an Ultra-High Input Impedance N-Channel JFET
2N4119
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-72 (Bottom View)
Available Packages:
2N4119 in TO-72
2N4119 in bare die.
Please contact Micross for full
package and die dimensions
2N4119 Benefits:
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
The 2N4119 provides ultra-high input impedance. The
device is specified with a 10-pA limit and is ideal for use
as a high-impedance sensitive front-end amplifier.
2N4119 Applications:
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4124-AMMO | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4123-AMMO | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4124/E7 | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 2N4124/E6 | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 2N4124TPE1 | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4119_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4119A | 功能描述:JFET 40V 0.2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4119A_TO-71 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4119A-2 | 制造商:Vishay Siliconix 功能描述:SS SOT23 GP XSTR NPN 65V - Bulk |
| 2N4119A-E3 | 功能描述:JFET 40V 0.2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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