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参数资料
| 型号： | 2N4124-BULK |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 141K |
| 代理商： | 2N4124-BULK |
VISHAY
2N4124
Document Number 85110
Rev. 1.2, 01-Sep-04
Vishay Semiconductors
www.vishay.com
1
19160
1 2
3
2
1
3
E
B
C
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Transistor for switching and
amplifier applications.
Especially suitable for AF-driver and low-power
output stages.
As complementary type, the PNP transistor
2N4126 is recommended.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 2 mm from case are kept at ambient temperature.
Maximum Thermal Resistance
1) Valid provided that leads at a distance of 2 mm from case are kept at ambient temperature.
Part
Type differentiation
Ordering code
Remarks
2N4124
hFE, Typ 60 @ 50 mA
2N4124-BULK or 2N4124-TAP
Bulk / Ammopack
Parameter
Test condition
Symbol
Value
Unit
Collector - emitter voltage
VCEO
25
V
Collector - base voltage
VCBO
30
Emitter - base voltage
VEBO
5V
Collector current
IC
200
mA
Collector peak current
ICM
800
mA
Base current
IB
50
mA
Power dissipation
TA = 25 °C
Ptot
6251)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RθJA
2001)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4124-BULKS | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124G | 功能描述:两极晶体管 - BJT 200mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| 2N4124RA | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-92 |
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