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参数资料
| 型号： | 2N4124/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 184K |
| 代理商： | 2N4124/E7 |
2N4124
Vishay Semiconductors
formerly General Semiconductor
Document Number 88115
www.vishay.com
07-May-02
1
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Transistor for switching and
amplifier applications.
Especially suitable for AF-driver and low-power
output stages.
As complementary type, the PNP transistor
2N4126 is recommended.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
5V
Collector Current
IC
200
mA
Peak Collector Current
ICM
800
mA
Base Current
IB
50
mA
Power Dissipation at Tamb = 25°CPtot
625(1)
mW
Thermal Resistance Junction to Ambient Air
R
ΘJA
200(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Valid provided that leads at a distance of 2mm from case are kept at ambient temperature.
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4124G | 功能描述:两极晶体管 - BJT 200mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| 2N4124RA | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4124T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-92 |
| 2N4124TA | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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