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参数资料
| 型号： | 2N4237.MODR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 117K |
| 代理商： | 2N4237.MODR1 |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8367
Issue 1
Page 1 of 3
2N4237
VCBO=50V(Min), VCEO=40V(Min)
Hermetic TO-39 Metal package.
Ideally suited for General Purpose and
Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
50V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
1.0A
IB
Base Current
0.5A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.7mW/°C
PD
Total Power Dissipation at
TC = 25°C
6W
Derate Above 25°C
34mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
175
°C/W
RθJC
Thermal Resistance, Junction To Case
29
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4238 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4239 | 功能描述:两极晶体管 - BJT NPN Power Ampl RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4239X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| 2N424 | 制造商:TI 功能描述:2N424 |
| 2N4240 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 2A 2PIN TO-66 - Bulk |
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