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参数资料
| 型号： | 2N4237.MODR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 117K |
| 代理商： | 2N4237.MODR1 |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4237
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8367
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
40
V
VCE = 50V
VBE = -1.5V
100
nA
VCE = 30V
VBE = -1.5V
ICEX
Collector Cut-Off Current
TA = 150°C
25
A
ICBO
Collector Cut-Off Current
VCB = 50V
IE = 0
100
nA
IEBO
Emitter Cut-Off Current
VEB = 6V
IC = 0
0.5
mA
IC = 100mA
VCE = 1.0V
30
IC = 250mA
VCE = 1.0V
30
150
TA = -55°C
15
hFE
(1)
Forward-current transfer
ratio
IC = 500mA
VCE = 1.0V
30
IC = 500mA
IB = 50mA
0.3
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 1.0A
IB = 0.1A
0.6
IC = 500mA
IB = 50mA
1.0
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 1.0A
IB = 0.1A
1.5
V
DYNAMIC CHARACTERISTICS
IC = 100mA
VCE = 10V
| hfe |
Small signal forward-current
transfer ratio
f = 10MHz
3.0
VCB = 10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
100
pF
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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