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参数资料
| 型号： | 2N4391-JQR |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 文件页数： | 2/2页 |
| 文件大小： | 13K |
| 代理商： | 2N4391-JQR |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IG = 1.0AVDS = 0
VGS = 20V
VDS = 0
VGS = 20V
VDS = 0
TA = 150°C
VDS = 20V
ID = 1.0nA
IG = 1.0mA
VDS = 0
VGS = 12V
VDS = 20V
VGS = 12V
VDS = 20V
TA = 150°C
VGS = 0V
VDS = 20V
ID = 12mA
VGS = 0
ID = 1.0mA
VGS = 0
VGS = 0V
VDS = 20V
f = 1.0MHz
VGS = 12V
VDS = 0V
f = 1.0MHz
VGS = 0V
ID = 0
f = 1.0kHz
ID(on) = 12mA
VGS(on) = 12V
ID(on) = 12mA
VGS(off) = 12V
40
0.1
0.2
4.0
10
1.0
0.1
0.2
50
150
0.4
30
14
3.5
30
15
20
5.0
15
OFF CHARACTERISTICS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N4391
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2) ft is defined as the frequency at which |hfe| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
nA
A
V
nA
A
mA
V
pF
ns
V(BR)GSS
Gate Source Breakdown Voltage1
IGSS
Gate Reverse Current
VGS
Gate Source Voltage
VGS(f)
Gate Source Forward Voltage
ID(off)
Drain
Cut-off Current
IDSS
Zero Gate voltage Drain Current1
VDS(on)
Drain Source On–Voltage
rDS(on)
Static Drain Source On Resistance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
rds(on)
Drain–Source “ON” Resistance
ton
Turn–On Time
toff
Turn–Off Time
tr
RiseTime
tf
FallTime
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4391-JQR-BG4 | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N4392C | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N4392 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N4391 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 2N4392 | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4391UB | 功能描述:N CHANNEL JFET 制造商:microsemi ire division 系列:* 零件状态:在售 标准包装:1 |
| 2N4392 | 功能描述:JFET N-Chan JFET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N4392_03 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:JFET SWITCHING N CHANNEL- DEPLETION |
| 2N4392_TO-18 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:Single N-Channel JFET switch |
| 2N4392-2 | 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 3-Pin TO-206AA T/R 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk |
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