参数资料
型号: 2N4399
元件分类: 功率晶体管
英文描述: 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
文件页数: 2/2页
文件大小: 29K
代理商: 2N4399
6 Lake Street, Lawrence, MA 01841
3/98 REV: D
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 15 Adc, VCE = 2.0 Vdc
2N4399
IC = 10 Adc, VCE = 2.0 Vdc
2N5745
IC = 30 Adc, VCE = 5.0 Vdc
2N4399
IC = 20 Adc, VCE = 5.0 Vdc
2N5745
hFE
40
15
5.0
425
60
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
2N4399
2N5745
VCE(sat)
0.55
0.75
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 15 Adc, IB = 1.5 Adc
2N4399
2N5745
VBE(sat)
1.7
1.8
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
h
fe
4.0
40
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
hfe
40
425
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
1000
pF
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.67 Vdc, IC = 30 Adc
2N4399
VCE = 10 Vdc, IC = 20 Adc
2N5745
Test 2
VCE = 20 Vdc, IC = 10 Adc
All Types
Test 3
VCE = 40 Vdc, IC = 3.0 Adc
All Types
Test 4
VCE = 50 Vdc, IC = 600 mAdc
2N4399
VCE = 60 Vdc, IC = 600 mAdc
2N5745
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
相关PDF资料
PDF描述
2N4399 30 A, PNP, Si, POWER TRANSISTOR, TO-3
2N43A 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
2N43A 300 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N45 10 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N43 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2N439A 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN HIGH FREQUENCY COMPUTER TRANSISTORS
2N43A 制造商:General Electric Company 功能描述:
2N440 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
2N4400 功能描述:两极晶体管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN