参数资料
型号: 2N4400D27Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件页数: 7/16页
文件大小: 519K
代理商: 2N4400D27Z
Product Folder - Fairchild P/N 2N4400 - NPN General Purpose Amplifier
space
space
Product Folders and
Datasheets
Application
notes
space
space
2N4400
NPN General Purpose Amplifier
Related Links
Dotted line
Dotted line
Dotted line
Dotted line
Dotted line
Dotted line
Contents
General description
This device is designed for use as general
purpose amplifiers and switches requiring
collector currents to 500 mA.
Datasheet
Product status/pricing/packaging
Product
Product status Pricing* Package type Leads Package marking Packing method
2N4400BU
Full Production
$0.05
3
N/A
BULK
2N4400H1TA Full Production
$0.048
3
N/A
TAPE REEL
2N4400H1TF Full Production
$0.05
3
N/A
TAPE REEL
2N4400
Full Production
$0.073
TO-92
3
$Y&3
2N
4400
BULK
2N4400RA
Full Production
$0.073
TO-92
3
$Y&3
2N
4400
TAPE REEL
2N4400TA
Full Production
$0.05
3
N/A
TAPE REEL
2N4400TF
Full Production
$0.05
3
N/A
TAPE REEL
* 1,000 piece Budgetary Pricing
Models
Package & leads
Condition
Temperature range
Software version
Revision date
PSPICE
file:///H|/imaging/BITTING/cpl/20020725_1/07252002_10/FAIR/07252002/2N4400.html (1 of 2) [Jul/26/2002 11:29:12 AM]
GO
相关PDF资料
PDF描述
2N4400J05Z 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400J18Z 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400H1TA 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400D75Z 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400RLRB 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2N4400RA 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400RLRB 制造商:ON Semiconductor 功能描述:
2N4400TA 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400TA_Q 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4400TAR 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2