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参数资料
型号： 2N4402RLRA
厂商： ON SEMICONDUCTOR
元件分类： 小信号晶体管
英文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装： PLASTIC, TO-226AA, 3 PIN
文件页数： 12/25页
文件大小： 427K
代理商： 2N4402RLRA
2N4402 2N4403
2–33
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4403
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4402
2N4403
(IC = 150 mAdc, VCE = 2.0 Vdc)(1)
2N4402
2N4403
(IC = 500 mAdc, VCE = 2.0 Vdc)(1)
Both
hFE
30
60
50
100
50
100
20
—
150
300
—
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
0.4
0.75
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
—
0.95
1.3
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4402
2N4403
fT
150
200
—
MHz
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
8.5
pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
—
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
hie
750
1.5 k
7.5 k
15 k
ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
hfe
30
60
250
500
—
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
100
mhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
td
—
15
ns
Rise Time
( CC
BE
IC = 150 mAdc, IB1 = 15 mAdc)
tr
—
20
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
—
225
ns
Fall Time
( CC
C
IB1 = 15 mA, IB2 = 15 mA)
tf
—
30
ns
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
– 16 V
10 to 100
s,
DUTY CYCLE = 2%
0
1.0 k
– 30 V
200
CS* < 10 pF
1.0 k
– 30 V
200
CS* < 10 pF
+ 4.0 V
< 2 ns
1.0 to 100
s,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
–16 V
相关PDF资料
PDF描述
2N4402 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N2894A/PH Si, RF SMALL SIGNAL TRANSISTOR, TO-18
2N4403-AMMO 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4403/E7 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
2N4403 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2N4402TA 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4402TA_Q 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4402TAR 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4402TF 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N4402TF_Q 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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