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参数资料
| 型号： | 2N4403/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 25K |
| 代理商： | 2N4403/E7 |
2N4403
Vishay Semiconductors
formerly General Semiconductor
Document Number 88118
www.vishay.com
08-May-02
1
New Product
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N4401 is recommended.
On special request, this transistor is also
manufactured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT4403.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
–VCEO
40
V
Collector-Base Voltage
–VCBO
40
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
600
mA
Power Dissipation
TA = 25°C
Ptot
625
mW
Derate above 25°C
5.0
mW/°C
Power Dissipation
TC = 25°C
Ptot
1.5
W
Derate above 25°C
12
mW/°C
Thermal Resistance Junction to Ambient Air
R
ΘJA
200
°C/W
Thermal Resistance Junction to Case
R
ΘJC
83.3
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4403 | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4403 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5087 | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4407LEADFREE | 2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4403G | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N4403L-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403L-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403NLBU | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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