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参数资料
| 型号： | 2N4403/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 25K |
| 代理商： | 2N4403/E7 |
2N4403
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88118
2
08-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
–VCE = 1 V, –IC = 0.1 mA
30
——
–VCE = 1 V, –IC = 1 mA
60
——
DC Current Gain
hFE
–VCE = 1 V, –IC = 10 mA
100
———
–VCE = 2 V, –IC = 150 mA
100
—
300
–VCE = 2 V, –IC = 500 mA
20
——
Collector Cutoff Current
–ICEV
–VEB = 0.4 V, –VCE = 35 V
——
100
nA
Base Cutoff Current
–IBEV
–VEB = 0.4 V, –VCE = 35 V
——
100
nA
Collector-Emitter Saturation Voltage(1)
–VCEsat
–IC = 150 mA, –IB = 15 mA
——
0.40
V
–IC = 500 mA, –IB = 50 mA
——
0.75
Base-Emitter Saturation Voltage(1)
–VBEsat
–IC = 150 mA, –IB = 15 mA
0.75
—
0.95
V
–IC = 500 mA, –IB = 50 mA
——
1.30
Collector-Emitter Breakdown Voltage
–V(BR)CEO
–IC = 1 mA, IB = 0
40
——
V
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 0.1 mA, IE = 0
40
——
V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 0.1 mA, IC = 0
5.0
——
V
Input Impedance
hie
–VCE = 10 V, –IC = 1 mA,
1.5
—
15
k
f = 1 kHz
Voltage Feedback Ratio
hre
–VCE = 10 V, –IC = 1 mA,
0.1 10-4
—
8 10-4
—
f = 1 kHz
Current Gain-Bandwidth Product
fT
–VCE = 10 V, –IC = 20 mA
200
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCB
–VCB = 10 V, IE = 0,
——
8.5
pF
f = 1.0 MHz
Emitter-Base Capacitance
CEB
–VEB = 0.5 V, IC = 0
——
30
pF
f = 1.0 MHz
Small Signal Current Gain
hfe
–VCE = 10 V, –IC = 1 mA
60
—
500
—
f = 1 kHz
Output Admittance
hoe
–VCE = 10 V, –IC = 1 mA
1.0
—
100
S
f = 1 kHz
Notes:
(1) Pulse test: Pulse width
≤ 300s - Duty cycle ≤ 2%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4403G | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N4403L-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403L-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403NLBU | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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