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参数资料
| 型号： | 2N4403RL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 20/25页 |
| 文件大小： | 427K |
| 代理商： | 2N4403RL1 |
2N4402 2N4403
2–35
Motorola Small–Signal Transistors, FETs and Diodes Device Data
6
8
10
0
4
2
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02
0.05
100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
NF
,NOISE
FIGURE
(dB)
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
RS = OPTIMUM SOURCE RESISTANCE
50
100
200
500
1 k
2 k
5 k
10 k
20 k
50 k
6
8
10
0
4
2
NF
,NOISE
FIGURE
(dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1 kHz
IC = 50 A
100
A
500
A
1.0 mA
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4402 and 2N4403 lines, and the
same units were used to develop the correspondingly–
numbered curves on each graph.
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
300
700
30
200
100
1000
h
fe
,C
U
RRENT
G
AIN
h ie
,INPUT
IMPEDANCE
(OHMS)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mAdc)
100 k
100
50
5.0 7.0
20 k
10 k
5k
2k
1k
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
5.0 7.0
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
0.1
20
Figure 13. Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h
,OUTPUT
ADMITT
ANCE
(
mhos)
oe
h
,V
OL
TA
G
E
F
EE
D
BAC
K
RA
TIO
(X
10
)
re
m
–4
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
5.0 7.0
500
70
50 k
500
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4403RLG | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403RLRA | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403RLRAG | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403RLRM | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4403RLRMG | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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