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参数资料
| 型号： | 2N4416-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 封装： | LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 99K |
| 代理商： | 2N4416-E3 |
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
4
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
5
0
1.0
4
3
2
1
0
VDS Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
VGS = 0 V
VGS(off) = 2 V
Output Characteristics
5
0
1.0
4
3
2
1
0
VDS Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
VGS = 0 V
VGS(off) = 3 V
0.4 V
0.2 V
0.6 V
0.8 V
1.0 V
1.2 V
1.4 V
1.2 V
1.5 V
1.8 V
2.1 V
0.3 V
0.9 V
0.6 V
10
VGS Gate-Source Voltage (V)
Transfer Characteristics
VGS(off) = 2 V
TA = 55_C
125_C
Transfer Characteristics
TA = 55_C
125_C
VGS(off) = 3 V
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(off) = 2 V
TA = 55_C
125_C
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
TA = 55_C
125_C
VGS(off) = 3 V
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
10
0
8
6
4
2
0
2
0.4
0.8
1.2
1.6
10
0
8
6
4
2
0
3
0.6
1.2
1.8
2.4
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
25_C
g fs
Forward
T
ransconductance
(mS)
g fs
Forward
T
ransconductance
(mS)
I D
Drain
Current
(mA)
I D
Drain
Current
(mA)
I D
Drain
Current
(mA)
I D
Drain
Current
(mA)
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