参数资料
型号: 2N4416-E3
厂商: VISHAY SILICONIX
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
封装: LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN
文件页数: 5/7页
文件大小: 99K
代理商: 2N4416-E3
2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
ID Drain Current (mA)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
0.1
1
10
TA = 25_C
3 V
VGS(off) = 2 V
10
0.1
AV +
gfs RL
1 ) RLgos
Assume VDD = 15 V, VDS = 5 V
RL +
10 V
ID
VGS(off) = 2 V
3 V
300
0
240
180
120
60
100
0
80
60
40
20
1
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f = 1 MHz
VDS = 0 V
10 V
VDS = 0 V
10 V
VGS Gate-Source Voltage (V)
f = 1 MHz
Input Admittance
Forward Admittance
100
10
1
0.1
100
1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
100
10
1
0.1
100
1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
f Frequency (MHz)
5
0
4
3
2
1
0
20
4
8
12
16
3
0
2.4
1.8
1.2
0.6
0
20
4
8
12
16
200
500
200
500
bis
gis
bfs
gfs
r DS
(on)
Drain-Source
On-Resistance
(
)
A
V
oltage
Gain
C
is
s
Input
Capacitance
(pF)
C
rss
Reverse
Feedback
Capacitance
(pF)
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