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参数资料
| 型号： | 2N4416A-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 封装： | LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 99K |
| 代理商： | 2N4416A-E3 |
2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
3
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz
400 MHz
Parameter
Symbol
Test Conditions
Min
Max
Min
Max
Unit
Common Source Input Conductanced
giss
100
1,000
Common Source Input Susceptanced
biss
2,500
10,000
Common Source Output Conductanced
goss
VDS = 15 V, VGS = 0 V
75
100
mS
Common Source Output Susceptanced
boss
DS
GS
1,000
4,000
m
Common Source Forward Transconductanced
gfs
4,000
Common-Source Power Gaind
Gps
VDS = 15 V, ID = 5 mA
18
10
dB
Noise Figured
NF
RG = 1 kW
2
4
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
b.
Pulse test: PW v300 ms duty cycle v3%.
c.
This parameter not registered with JEDEC.
d.
Not a production test.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
rDS
gos
rDS @ ID = 300 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
IDSS
gfs
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
VGS(off) Gate-Source Cutoff Voltage (V)
10
8
0
6
4
2
20
0
16
12
8
4
0
10
2
4
6
8
100
80
0
60
40
20
500
0
400
300
200
100
0
10
2
4
6
8
VDS Drain-Source Voltage (V)
Output Characteristics
10
0
8
6
4
2
010
24
6
8
15
0
12
9
6
3
010
24
6
8
VGS(off) = 2 V
VGS(off) = 3 V
0.2 V
0.4 V
0.6 V
0.8 V
1.2 V
1.0 V
VGS = 0 V
0.6 V
0.9 V
1.2 V
1.5 V
1.8 V
VGS = 0 V
0.3 V
VGS(off) Gate-Source Cutoff Voltage (V)
1.4 V
gos
Output
conductance
(
S)
I DS
S
Saturation
Drain
Current
(mA)
g
fs
Forward
T
ransconductance
(mS)
r DS
(on)
Drain-Source
On-Resistance
(
)
I D
Drain
Current
(mA)
I D
Drain
Current
(mA)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4416-E3 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 2N4416A | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72 |
| 2N4416A | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 2N4416A | Si, RF SMALL SIGNAL, FET |
| 2N4338 | 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4416A-E3 | 制造商:Vishay Siliconix 功能描述:; LEADED PROCESS COMPATIBLE:YES |
| 2N4416CSM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel |
| 2N4416CSMA | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SMALL SIGNAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N4416DCSM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual N-Channel |
| 2N4416-E3 | 功能描述:JFET 30V 5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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