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参数资料
| 型号： | 2N4416A-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 封装： | LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 99K |
| 代理商： | 2N4416A-E3 |
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
6
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
Output Admittance
10
1
0.1
0.01
100
1000
(mS)
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
brs
grs
10
1
0.1
0.01
100
1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
gos
(mS)
f Frequency (MHz)
200
500
200
500
10
100
1 k
100 k
10 k
20
0
16
12
8
4
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
VDS = 10 V
ID = 5 mA
VGS = 0 V
0.1
1
10
TA = 55_C
125_C
VGS(off) = 3 V
ID Drain Current (mA)
f Frequency (Hz)
20
0
16
12
8
4
VDS = 10 V
f = 1 kHz
VDG Drain-Gate Voltage (V)
ID Drain Current (mA)
Gate Leakage Current
0.1 mA
IGSS @ 25_C
IGSS
@
125_C
Common-Source Forward
Transconductance vs. Drain Current
0.1
1
10
8
0
VGS(off) = 3 V
TA = 55_C
125_C
012
8
416
20
6
4
2
VDS = 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
TA = 25_C
TA = 125_C
IG @ ID = 5 mA
1 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
25_C
en
Noise
V
oltage
nV
/
Hz
g os
Output
Conductance
(
S)
g fs
Forward
T
ransconductance
(mS)
I G
Gate
Leakage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N4416-E3 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 2N4416A | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72 |
| 2N4416A | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 2N4416A | Si, RF SMALL SIGNAL, FET |
| 2N4338 | 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4416A-E3 | 制造商:Vishay Siliconix 功能描述:; LEADED PROCESS COMPATIBLE:YES |
| 2N4416CSM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel |
| 2N4416CSMA | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SMALL SIGNAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N4416DCSM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual N-Channel |
| 2N4416-E3 | 功能描述:JFET 30V 5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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