参数资料
型号: 2N4919
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
封装: TO-126, 3 PIN
文件页数: 1/1页
文件大小: 237K
代理商: 2N4919
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2N4919 Information
Category Transistors
2N4919 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 1.0
Absolute Max. Power Diss. (W) : 30
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq : 3.0M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-126var
Mounting Style : T
Description :
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