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参数资料
| 型号： | 2N4920-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 490K |
| 代理商： | 2N4920-BP |
2N4920
PNP General
Purpose Power
Transistors
Features
Designed for driver circuits, switching, and amplifier applications.
These high-performance plastic devices feature.
Medium-Power Plastic PNP Silicon Transistors.
Low Saturation Voltage: VCE(sat)=0.6V(Max) @ IC=1.0A
Excellent Power Dissipation Due to Thermopad Construction:
PD=30W @ TC=25
OC
Marking:2N4920
Gain Specified to IC=1.0A
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
(1)
1.0
3.0
A
IB
Base Current
1.0
A
PD
Total Device Dissipation
Derate above 25
OC
30
0.24
W
W/
OC
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics(2)
Symbol
Rating
Max
Unit
RJC
Thermal Resistance, Junction to Case
4.16
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(3)
(IC=0.1Adc, IB=0)
80
---
Vdc
ICEO
Collector Cutoff Current
(VCE=40Vdc, IB=0)
---
0.5
mAdc
ICEX
Collector Cutoff Current
(VCE=Rated VCEO, VEB(off)=1.5Vdc)
---
0.1
mAdc
ICBO
Collector Cutoff Current
(VCB=Rated VCEO, IE=0)
---
0.1
mAdc
IEBO
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
---
1.0
mAdc
* Indicates JEDEC Registered Data for 2N4918 Series
(1) The 1.0A maximum IC value is based upon JEDEC current gain requirements.
The 3.0A maximum value is based upon actual current-handling capability of
the device.
(2) Recommend use of thermal compound for lowest thermal resistance.
(3) Pulse Test: PW=300us, Duty Cycle=2.0%
!
E
A
D
F
G
H
J
C
B
L
M
P
Q
N
R
K
PIN 1.
EMITTER
PIN 2.
COLLECTOR
1
2
3
PIN 3.
BASE
Revision: 3
2006/05/17
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N4920G | 功能描述:两极晶体管 - BJT 3A 80V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4921 | 功能描述:两极晶体管 - BJT 3A 40V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N4921/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Medium-Power Plastic NPN Silicon Transistors |
| 2N4921_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Medium−Power Plastic NPN Silicon Transistors |
| 2N4921G | 功能描述:两极晶体管 - BJT 3A 40V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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